Abstract
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
| Lingua originale | English |
|---|---|
| Titolo della pubblicazione ospite | Proceedings of the 15th IEEE International Conference on Nanotechnology July 27-30, 2015, Rome, Italy |
| Pagine | 1012-1014 |
| Numero di pagine | 3 |
| Stato di pubblicazione | Published - 2015 |
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All Science Journal Classification (ASJC) codes
- Process Chemistry and Technology
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cita questo
Macaluso, R., Cali', C., Mosca, M., & Feltin, E. (2015). Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer. In Proceedings of the 15th IEEE International Conference on Nanotechnology July 27-30, 2015, Rome, Italy (pagg. 1012-1014)