Abstract
Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Lingua originale | English |
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Titolo della pubblicazione ospite | Proceedings of the 15th IEEE International Conference on Nanotechnology July 27-30, 2015, Rome, Italy |
Pagine | 1012-1014 |
Numero di pagine | 3 |
Stato di pubblicazione | Published - 2015 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.1500.1508???
- ???subjectarea.asjc.2200.2208???
- ???subjectarea.asjc.2500.2503???
- ???subjectarea.asjc.2500.2504???
- ???subjectarea.asjc.2500.2508???