Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer

Risultato della ricerca: Conference contribution

4 Citazioni (Scopus)

Abstract

Zinc oxide nanorods have great potential for the realization of high efficiency heterostructure LEDs based on pdoped gallium nitride. In order to obtain a good confinement of the light, a well-aligned nanorod waveguiding structure is desirable. This paper reports on the fabrication of vertical zinc oxide nanorods using a solution-based growth process that does not require a seed layer. The nanorods obtained follow the crystalline growth direction of the GaN layer along the c-axis. Various results with different reagent concentrations are reported.
Lingua originaleEnglish
Titolo della pubblicazione ospiteProceedings of the 15th IEEE International Conference on Nanotechnology July 27-30, 2015, Rome, Italy
Pagine1012-1014
Numero di pagine3
Stato di pubblicazionePublished - 2015

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All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cita questo

Macaluso, R., Cali', C., Mosca, M., & Feltin, E. (2015). Well-aligned hydrothermally synthesized zinc oxide nanorods on p-GaN without a seed layer. In Proceedings of the 15th IEEE International Conference on Nanotechnology July 27-30, 2015, Rome, Italy (pagg. 1012-1014)