We report an experimental study by photoluminescence, opticalabsorption and Electron Paramagnetic Resonance measurements on theeffects of exposure of Ge-doped amorphous SiO2 to γ ray radiation at roomtemperature. We have evidenced that irradiation at doses of the order of1 MGy is able to generate Ge-related defects, recognizable from theiroptical properties as twofold coordinated Ge centers. Until now, suchcenters, responsible for photosensitivity of Ge-doped SiO2, have beeninduced only in synthesis procedures of materials. The found resultevidences a role played by γ radiation in generating photosensitive defectsand could furnish a novel basis for photosensitive pattern writing throughionizing radiation.
|Numero di pagine||6|
|Stato di pubblicazione||Published - 2008|
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