The effects of isochronal thermal treatments on three gamma-irradiation-induced point defects, named the E',ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigatedby means of photoluminescence spectroscopy, and the H(I) and E' centers by electron paramagneticresonance. The annealing processes of the ODC(II) and H(I) center are shown to be independent of each other,and no conversion mechanisms are evidenced. In contrast, a strong similarity is observed between the annealingcurves of the ODC(II) and E' centers. We tentatively ascribe the annealing processes to reactions of thedefects with radiolytically formed molecules. We suggest that the H(I) center reacts with molecular hydrogendiffusing through the matrix, whereas, by analogy with results reported in the literature about the E' center, theannealing of ODC(II) is attributed to reactions with molecular oxygen or water.
|pagine (da-a)||115203 1-6|
|Rivista||PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS|
|Stato di pubblicazione||Published - 2006|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics