Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf and Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat band potential and electrons internal photoemission threshold energy as a function of thickness and composition of anodic oxides. Impedance measurements were performed in a wide range of electrode potentials in order to study the response of the anodic oxides under anodic and cathodic polarization and to estimate their dielectric constants.
|Numero di pagine||15|
|Stato di pubblicazione||Published - 2017|
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