Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2

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Abstract

Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf and Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat band potential and electrons internal photoemission threshold energy as a function of thickness and composition of anodic oxides. Impedance measurements were performed in a wide range of electrode potentials in order to study the response of the anodic oxides under anodic and cathodic polarization and to estimate their dielectric constants.
Lingua originaleEnglish
pagine (da-a)1-15
Numero di pagine15
RivistaECS Transactions
Volume75
Stato di pubblicazionePublished - 2017

All Science Journal Classification (ASJC) codes

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