TY - JOUR
T1 - Supramolecular Order of Solution-Processed Perylenediimide Thin Films: High-Performance Small-Channel n-Type Organic Transistors
AU - Pignataro, Bruno Giuseppe
AU - Piliego, Claudia
AU - Jaye, Cherno
AU - Fischer, Daniel A.
AU - Fabiano, Simone
AU - Loi, Maria Antonietta
AU - Chen, Zhihua
AU - Wang, He
AU - Facchetti, Antonio
AU - Loo, Yueh-Lin
PY - 2011
Y1 - 2011
N2 - N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), asoluble and air stable n-type molecule, undergoes signifi cant reorganizationupon thermal annealing after solution deposition on several substrates withdifferent surface energies. Interestingly, this system exhibits an exceptionaledge-on orientation regardless of the substrate chemistry. This preferentialorientation is rationalized in terms of strong intermolecular interactionsbetween the PDIF-CN 2 molecules. The presence of a pronounced π– πstacking is confi rmed by combining near-edge X-ray absorption fi ne structurespectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surfaceenergy measurements. The remarkable charge carrier mobility measuredin fi eld-effect transistors, using both bottom- and top-contact (bottom-gate)confi gurations, underlines the importance of strong intermolecular interactionsfor the realization of high performing devices.
AB - N,N ′ -1 H ,1 H -perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ), asoluble and air stable n-type molecule, undergoes signifi cant reorganizationupon thermal annealing after solution deposition on several substrates withdifferent surface energies. Interestingly, this system exhibits an exceptionaledge-on orientation regardless of the substrate chemistry. This preferentialorientation is rationalized in terms of strong intermolecular interactionsbetween the PDIF-CN 2 molecules. The presence of a pronounced π– πstacking is confi rmed by combining near-edge X-ray absorption fi ne structurespectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surfaceenergy measurements. The remarkable charge carrier mobility measuredin fi eld-effect transistors, using both bottom- and top-contact (bottom-gate)confi gurations, underlines the importance of strong intermolecular interactionsfor the realization of high performing devices.
KW - Organic Transistors
KW - Thin Films
KW - n-Type semiconductors
KW - Organic Transistors
KW - Thin Films
KW - n-Type semiconductors
UR - http://hdl.handle.net/10447/65824
M3 - Article
SN - 1616-301X
VL - 21
SP - 4479
EP - 4486
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -