Substrate and atmosphere influence on oxygen p-doped graphene

Bruno Giuseppe Pignataro, Franco Mario Gelardi, Gianpiero Buscarino, Marco Cannas, Simonpietro Agnello, Michelangelo Scopelliti, Filippo Giannazzo, Aurora Piazza, Gabriele Fisichella, Fabrizio Roccaforte, Antonino La Magna

Risultato della ricerca: Articlepeer review

13 Citazioni (Scopus)


The mechanisms responsible for p-type doping of substrate supported monolayer graphene (Gr) by thermal treatments in oxygen ambient have been investigated by micro-Raman spectroscopy, atomic force microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS), considering commonly employed dielectric substrates, such as SiO2 and Al2O3 thin films grown on Si. While a high p-type doping (∼1013 cm−2) is observed for Gr on SiO2, no significant doping is found for Gr samples on the Al2O3 substrate, suggesting a key role of the Gr/SiO2 interface states in the trapping of oxygen responsible for the Gr p-type doping. Furthermore, we investigated the doping stability of Gr on SiO2 during subsequent thermal treatments in nitrogen (N2), carbon dioxide (CO2), water (H2O) or in vacuum controlled atmospheres. These processes induce only minor effects on the doping of Gr but for H2O and principally affect its defectiveness, suggesting that the literature reported air influence on the doping depends on water present in the atmosphere.
Lingua originaleEnglish
pagine (da-a)696-704
Numero di pagine9
Stato di pubblicazionePublished - 2016

All Science Journal Classification (ASJC) codes

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