Solar blind AlGaN photodetectors with a very high spectral selectivity

Mauro Mosca, Simpson, Dussaigne, Jean-Luc Reverchon, Verly, Jean-Yves Duboz, Nicolas Grandjean, Mauro Mosca, Simpson

Risultato della ricerca: Articlepeer review

7 Citazioni (Scopus)

Abstract

Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Lingua originaleEnglish
pagine (da-a)5-7
Numero di pagine3
RivistaTHE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS
Volume33
Stato di pubblicazionePublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics

Fingerprint Entra nei temi di ricerca di 'Solar blind AlGaN photodetectors with a very high spectral selectivity'. Insieme formano una fingerprint unica.

Cita questo