Simulation studies of electronic transport in a-Si:H thin film solar cells

Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;

Risultato della ricerca: Other contribution

Abstract

The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2009

Fingerprint

solar cells
homojunctions
thin films
electronics
amorphous silicon
simulation
computer programs
defects

Cita questo

Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S; (2009). Simulation studies of electronic transport in a-Si:H thin film solar cells.

Simulation studies of electronic transport in a-Si:H thin film solar cells. / Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;.

2009, .

Risultato della ricerca: Other contribution

Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S; 2009, Simulation studies of electronic transport in a-Si:H thin film solar cells..
Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;. Simulation studies of electronic transport in a-Si:H thin film solar cells. 2009.
Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;. / Simulation studies of electronic transport in a-Si:H thin film solar cells. 2009.
@misc{cb8b1382a16b4c35943bb4a92a243526,
title = "Simulation studies of electronic transport in a-Si:H thin film solar cells",
abstract = "The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.",
keywords = "thin film, solar cells, Hydrogenated Amorphous Silicon, a-Si:H, simulation, pin diode, electronic transport",
author = "{Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;} and Fabio Principato and Giuseppe Cannella",
year = "2009",
language = "English",
type = "Other",

}

TY - GEN

T1 - Simulation studies of electronic transport in a-Si:H thin film solar cells

AU - Garozzo, C; Lombardo, S; Foti, M; Cinnera Martino, V; Sutera, D; Rinaudo, S;

AU - Principato, Fabio

AU - Cannella, Giuseppe

PY - 2009

Y1 - 2009

N2 - The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.

AB - The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.

KW - thin film, solar cells, Hydrogenated Amorphous Silicon, a-Si:H, simulation, pin diode, electronic transport

UR - http://hdl.handle.net/10447/49018

M3 - Other contribution

ER -