Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection

Risultato della ricerca: Paper

Abstract

We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2018

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cita questo

@conference{c11d6c7ba688458897cf485f6f1bb97d,
title = "Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection",
abstract = "We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.",
author = "Alessandro Busacca and Alessandro Tomasino",
year = "2018",
language = "English",

}

TY - CONF

T1 - Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection

AU - Busacca, Alessandro

AU - Tomasino, Alessandro

PY - 2018

Y1 - 2018

N2 - We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.

AB - We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.

UR - http://hdl.handle.net/10447/351770

M3 - Paper

ER -