Silicon dosimeters based on Floating Gate Sensor: Design, implementation and characterization

Aldo Parlato, Elio Angelo Tomarchio, Pikhay, Cristiano Calligaro, Yakov Roizin, Gatti, Parlato

Risultato della ricerca: Conference contribution


A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Radiation-Hardened-By-Design (RHBD) approach guarantees that the absorbed dose does not degrade the circuitry.
Lingua originaleEnglish
Titolo della pubblicazione ospite20th IEEE Mediterranean Electrotechnical Conference, MELECON 2020 - Proceedings
Numero di pagine5
Stato di pubblicazionePublished - 2020

All Science Journal Classification (ASJC) codes

  • ???subjectarea.asjc.2200.2207???
  • ???subjectarea.asjc.2200.2208???
  • ???subjectarea.asjc.2600.2606???
  • ???subjectarea.asjc.1800.1802???
  • ???subjectarea.asjc.2100.2102???


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