Abstract
Oxidized Silicon nanomaterials produced by 1064 nm pulsed laser ablation in deionized water are investigated. High-resolution transmission electron microscopy coupled with energy dispersive X-ray spectroscopy allows to characterize the structural and chemical properties at a sub-nanometric scale. This analysis clarifies that laser ablation induces both self-limiting and complete oxidation processes which produce polycrystalline Si surrounded by a layer of SiO2 and amorphous fully oxidized SiO2, respectively. These nanostructures exhibit a composite luminescence spectrum which is investigated by time-resolved spectroscopy with a tunable laser excitation. The origin of the observed luminescence bands agrees with the two structural typologies: Si nanocrystals emit a μs-decaying red band; defects of SiO2 give rise to a ns-decaying UV band and two overlapping blue bands with lifetime in the ns and ms timescale.
Lingua originale | English |
---|---|
pagine (da-a) | 024303-1-024303-6 |
Numero di pagine | 6 |
Rivista | Journal of Applied Physics |
Volume | 120 |
Stato di pubblicazione | Published - 2016 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)