Room-temperature electrical characteristics of Pd/SiC diodes with embedded Au nanoparticles at the interface

Isodiana Crupi, Ruffino, Grimaldi, Alessia Irrera, Isodiana Crupi

Risultato della ricerca: Other

3 Citazioni (Scopus)

Abstract

We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical properties of Schottky diodes. These nanostructured diodes are proposed as possible components of integrated complex nanoelectronic devices. © 2010 American Institute of Physics.
Lingua originaleEnglish
Pagine103-106
Numero di pagine4
Stato di pubblicazionePublished - 2010

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diodes
Schottky diodes
nanoparticles
inhomogeneity
room temperature
electrical properties
preparation
physics
radii
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cita questo

Room-temperature electrical characteristics of Pd/SiC diodes with embedded Au nanoparticles at the interface. / Crupi, Isodiana; Ruffino; Grimaldi; Irrera, Alessia; Crupi, Isodiana.

2010. 103-106.

Risultato della ricerca: Other

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abstract = "We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical properties of Schottky diodes. These nanostructured diodes are proposed as possible components of integrated complex nanoelectronic devices. {\circledC} 2010 American Institute of Physics.",
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AU - Crupi, Isodiana

AU - Ruffino, null

AU - Grimaldi, null

AU - Irrera, Alessia

AU - Crupi, Isodiana

PY - 2010

Y1 - 2010

N2 - We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical properties of Schottky diodes. These nanostructured diodes are proposed as possible components of integrated complex nanoelectronic devices. © 2010 American Institute of Physics.

AB - We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical properties of Schottky diodes. These nanostructured diodes are proposed as possible components of integrated complex nanoelectronic devices. © 2010 American Institute of Physics.

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