Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology

Isodiana Crupi, Maria Miritello, Pacifici, Giuseppe Nicotra, Corrado Spinella, Paine, Zaslavsky, Mirabella, Pei Liu, Cosentino, Terrasi, Son T. Le, Lee

Risultato della ricerca: Article

8 Citazioni (Scopus)

Abstract

In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. © 2013 Elsevier B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)551-555
Numero di pagine5
RivistaThin Solid Films
Volume548
Stato di pubblicazionePublished - 2013

Fingerprint

Nanoclusters
Photodetectors
nanoclusters
photometers
spectral sensitivity
Quantum efficiency
metal oxide semiconductors
Silicon Dioxide
quantum efficiency
Metals
trapping
Silica
retarding
silicon dioxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cita questo

Crupi, I., Miritello, M., Pacifici, Nicotra, G., Spinella, C., Paine, ... Lee (2013). Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology. Thin Solid Films, 548, 551-555.

Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology. / Crupi, Isodiana; Miritello, Maria; Pacifici; Nicotra, Giuseppe; Spinella, Corrado; Paine; Zaslavsky; Mirabella; Liu, Pei; Cosentino; Terrasi; Le, Son T.; Lee.

In: Thin Solid Films, Vol. 548, 2013, pag. 551-555.

Risultato della ricerca: Article

Crupi, I, Miritello, M, Pacifici, Nicotra, G, Spinella, C, Paine, Zaslavsky, Mirabella, Liu, P, Cosentino, Terrasi, Le, ST & Lee 2013, 'Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology', Thin Solid Films, vol. 548, pagg. 551-555.
Crupi I, Miritello M, Pacifici, Nicotra G, Spinella C, Paine e altri. Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology. Thin Solid Films. 2013;548:551-555.
Crupi, Isodiana ; Miritello, Maria ; Pacifici ; Nicotra, Giuseppe ; Spinella, Corrado ; Paine ; Zaslavsky ; Mirabella ; Liu, Pei ; Cosentino ; Terrasi ; Le, Son T. ; Lee. / Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology. In: Thin Solid Films. 2013 ; Vol. 548. pagg. 551-555.
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abstract = "In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700{\%} at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. {\circledC} 2013 Elsevier B.V. All rights reserved.",
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AU - Crupi, Isodiana

AU - Miritello, Maria

AU - Pacifici, null

AU - Nicotra, Giuseppe

AU - Spinella, Corrado

AU - Paine, null

AU - Zaslavsky, null

AU - Mirabella, null

AU - Liu, Pei

AU - Cosentino, null

AU - Terrasi, null

AU - Le, Son T.

AU - Lee, null

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N2 - In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. © 2013 Elsevier B.V. All rights reserved.

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