Responsivity measurements of SiC Schottky photodiodes

Mazzillo, M; Sanfilippo, D; Fallica, G

Risultato della ricerca: Paper

Abstract

We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2014

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Mazzillo, M; Sanfilippo, D; Fallica, G (2014). Responsivity measurements of SiC Schottky photodiodes.

Responsivity measurements of SiC Schottky photodiodes. / Mazzillo, M; Sanfilippo, D; Fallica, G.

2014.

Risultato della ricerca: Paper

Mazzillo, M; Sanfilippo, D; Fallica, G 2014, 'Responsivity measurements of SiC Schottky photodiodes'.
Mazzillo, M; Sanfilippo, D; Fallica, G. Responsivity measurements of SiC Schottky photodiodes. 2014.
Mazzillo, M; Sanfilippo, D; Fallica, G. / Responsivity measurements of SiC Schottky photodiodes.
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title = "Responsivity measurements of SiC Schottky photodiodes",
abstract = "We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.",
author = "{Mazzillo, M; Sanfilippo, D; Fallica, G} and Giaconia, {Giuseppe Costantino} and Alessandro Busacca and Salvatore Stivala and Antonino Parisi and Andrea Ando' and Gabriele Adamo and Diego Agro' and Luciano Curcio and Alessandro Tomasino",
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TY - CONF

T1 - Responsivity measurements of SiC Schottky photodiodes

AU - Mazzillo, M; Sanfilippo, D; Fallica, G

AU - Giaconia, Giuseppe Costantino

AU - Busacca, Alessandro

AU - Stivala, Salvatore

AU - Parisi, Antonino

AU - Ando', Andrea

AU - Adamo, Gabriele

AU - Agro', Diego

AU - Curcio, Luciano

AU - Tomasino, Alessandro

PY - 2014

Y1 - 2014

N2 - We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

AB - We investigated the technical features of three novel classes of 4H-SiC vertical Schottky UV detectors employing Ni2Si interdigitated strips whose pitch size is 8, 10 and 20 µm, respectively, based on the pinch-off surface effect.

UR - http://hdl.handle.net/10447/98091

M3 - Paper

ER -