Abstract
We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm).For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse bias voltage increases. With regards to our responsivity measurements, carried out in the abovementioned spectral range, we have found a peak around 669 nm for the N-on-P and a peak at 417 nm for the P-on-N SiPM. A physical explanation of the all experimental results is also provided in the paper.
Lingua originale | English |
---|---|
Numero di pagine | 0 |
Stato di pubblicazione | Published - 2013 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.2500.2504???
- ???subjectarea.asjc.3100.3104???
- ???subjectarea.asjc.1700.1706???
- ???subjectarea.asjc.2600.2604???
- ???subjectarea.asjc.2200.2208???