Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

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6 Citazioni (Scopus)

Abstract

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.
Lingua originaleEnglish
Numero di pagine7
Stato di pubblicazionePublished - 2014

Fingerprint

Responsivity
Photodiode
Photodiodes
Ultraviolet radiation
photodiodes
Strip
strip
Monitoring
Ultraviolet detectors
Reverse
Surface Effects
Depletion
Wavelength
Temperature
depletion
Vertical
Detector
temperature
detectors
wavelengths

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cita questo

@conference{fc0c981f02474283bd48b9eaa4e5124a,
title = "Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring",
abstract = "We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.",
author = "Alessandro Tomasino and Gabriele Adamo and Diego Agro' and Giaconia, {Giuseppe Costantino} and Andrea Ando' and Luciano Curcio and Alessandro Busacca and Salvatore Stivala and Antonino Parisi and Fallica, {Pier Giorgio} and Delfo Sanfilippo and Massimo Mazzillo",
year = "2014",
language = "English",

}

TY - CONF

T1 - Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

AU - Tomasino, Alessandro

AU - Adamo, Gabriele

AU - Agro', Diego

AU - Giaconia, Giuseppe Costantino

AU - Ando', Andrea

AU - Curcio, Luciano

AU - Busacca, Alessandro

AU - Stivala, Salvatore

AU - Parisi, Antonino

AU - Fallica, Pier Giorgio

AU - Sanfilippo, Delfo

AU - Mazzillo, Massimo

PY - 2014

Y1 - 2014

N2 - We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.

AB - We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.

UR - http://hdl.handle.net/10447/98167

M3 - Other

ER -