Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring

Risultato della ricerca: Other

6 Citazioni (Scopus)

Abstract

We report on the design and the electro-optical characterization of a novel class of 4H-SiC vertical Schottky UV detectors, based on the pinch-off surface effect and obtained employing Ni2Si interdigitated strips. We have measured, in dark conditions, the forward and reverse I–V characteristics as a function of the temperature and the C–V characteristics. Responsivity measurements of the devices, as a function of the wavelength (in the 200 – 400 nm range), of the package temperature and of the applied reverse bias are reported. We compared devices featured by different strip pitch size, and found that the 10 µm device pitch exhibits the best results, being the best compromise in terms of full depletion and space-strip width ratio.
Lingua originaleEnglish
Numero di pagine7
Stato di pubblicazionePublished - 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Entra nei temi di ricerca di 'Responsivity measurements of 4H-SiC Schottky photodiodes for UV light monitoring'. Insieme formano una fingerprint unica.

  • Cita questo