Resistive switching in microscale anodic titanium dioxide-based memristors

Risultato della ricerca: Articlepeer review

19 Citazioni (Scopus)

Abstract

The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a ROFF/RON ratio of 80 for the thickest oxide film devices
Lingua originaleEnglish
pagine (da-a)135-142
Numero di pagine8
RivistaSuperlattices and Microstructures
Volume113
Stato di pubblicazionePublished - 2018

All Science Journal Classification (ASJC) codes

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  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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