Abstract
A quantitative investigation of a dipping technique for depositing a thin layer of resist on circularly symmetrical objects is presented. The results obtained are valuable for preparing three-dimensional (3-D) surfaces suited for spatial microlithographic processes in the 1 to 10 μm linewidth range. © 1995, MCB UP Limited
| Lingua originale | English |
|---|---|
| pagine (da-a) | 22-24 |
| Numero di pagine | 3 |
| Rivista | Microelectronics International |
| Volume | 12 |
| Stato di pubblicazione | Published - 1995 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.2500.2504???
- ???subjectarea.asjc.3100.3107???
- ???subjectarea.asjc.3100.3104???
- ???subjectarea.asjc.2500.2508???
- ???subjectarea.asjc.2200.2208???