Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

Isodiana Crupi, Vulpio, Trusso, Fazio, Fortunato Neri, Gerardi, Lombardo, Liao

Risultato della ricerca: Article

23 Citazioni (Scopus)

Abstract

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochemical Society. All rights reserved.
Lingua originaleEnglish
pagine (da-a)G376-G378
Numero di pagine3
RivistaJournal of the Electrochemical Society
Volume149
Stato di pubblicazionePublished - 2002

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Silicon
silicon oxides
Oxide films
oxide films
Annealing
Crystalline materials
annealing
silicon
Raman spectra
transmission electron microscopy
Raman scattering
Temperature
gas mixtures
nanocrystals
Transmission electron microscopy
Raman spectroscopy
vapor deposition
broadband
Plasma enhanced chemical vapor deposition
microstructure

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment

Cita questo

Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing. / Crupi, Isodiana; Vulpio; Trusso; Fazio; Neri, Fortunato; Gerardi; Lombardo; Liao.

In: Journal of the Electrochemical Society, Vol. 149, 2002, pag. G376-G378.

Risultato della ricerca: Article

Crupi, Isodiana ; Vulpio ; Trusso ; Fazio ; Neri, Fortunato ; Gerardi ; Lombardo ; Liao. / Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing. In: Journal of the Electrochemical Society. 2002 ; Vol. 149. pagg. G376-G378.
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abstract = "Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. {\circledC} 2002 The Electrochemical Society. All rights reserved.",
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T1 - Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

AU - Crupi, Isodiana

AU - Vulpio, null

AU - Trusso, null

AU - Fazio, null

AU - Neri, Fortunato

AU - Gerardi, null

AU - Lombardo, null

AU - Liao, null

PY - 2002

Y1 - 2002

N2 - Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochemical Society. All rights reserved.

AB - Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochemical Society. All rights reserved.

UR - http://hdl.handle.net/10447/179614

M3 - Article

VL - 149

SP - G376-G378

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

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