Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

Isodiana Crupi, Lombardo, Liao, Vulpio, Isodiana Crupi, Trusso, Fazio, Fortunato Neri, Gerardi

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23 Citazioni (Scopus)

Abstract

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochemical Society. All rights reserved.
Lingua originaleEnglish
pagine (da-a)G376-G378
Numero di pagine3
RivistaJournal of the Electrochemical Society
Volume149
Stato di pubblicazionePublished - 2002

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cita questo

Crupi, I., Lombardo, Liao, Vulpio, Crupi, I., Trusso, Fazio, Neri, F., & Gerardi (2002). Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing. Journal of the Electrochemical Society, 149, G376-G378.