Reliability and retention study of nanocrystal cell array

Isodiana Crupi, Lombardo, Melanotte, Isodiana Crupi, Ammendola, Gerardi

Risultato della ricerca: Otherpeer review

22 Citazioni (Scopus)

Abstract

We have studied nanocrystal memory arrays with 2.56×105 cells (256kb) in which Si nanocrystals have been obtained by CVD deposition on a 4nm tunnel oxide. The cells in the array are programmed and erased by electron tunneling through the SiO2 dielectric. We find that the threshold voltage distribution has little spread. In addition the arrays are also very robust with respect to drain stress and show good retention.
Lingua originaleEnglish
Pagine475-478
Numero di pagine4
Stato di pubblicazionePublished - 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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