RELAXATION OF ELECTRON SPIN DURING FIELD TRANSPORT IN GaAs BULKS

Risultato della ricerca: Other contribution

Abstract

The spin depolarization of drifting electrons in a n-type doped GaAs bulk semiconductor is studied, in a wide range of lattice temperature (40 K < TL < 300 K) and doping density (10^{13} cm^{−3} < n < 10^{16} cm^{−3}), by adopting a semiclassical Monte Carlo approach. The effect of the mechanism of Dyakonov-Perel (DP) on the spin depolarization of the conduction electrons is analyzed as a function of the amplitude of a static electric field, ranging between 0.1 and 6 kV cm^{−1}, by considering the spin dynamics of electrons in both the Γ-valley and the upper L-valleys of the semiconductor. Moreover, the role of the electron-electron scattering mechanism in the suppression of DP spin relaxation is discussed. For high values of the electric field, the strong spin–orbit coupling of electrons in the Γ-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV cm^{−1}, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained on different semiconductor structures.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2011

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electron spin
valleys
depolarization
electrons
life (durability)
electric fields
spin dynamics
conduction electrons
electron scattering
retarding
orbits
temperature
polarization

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@misc{29cea5fd444e4ab3b29053629b20dfa5,
title = "RELAXATION OF ELECTRON SPIN DURING FIELD TRANSPORT IN GaAs BULKS",
abstract = "The spin depolarization of drifting electrons in a n-type doped GaAs bulk semiconductor is studied, in a wide range of lattice temperature (40 K < TL < 300 K) and doping density (10^{13} cm^{−3} < n < 10^{16} cm^{−3}), by adopting a semiclassical Monte Carlo approach. The effect of the mechanism of Dyakonov-Perel (DP) on the spin depolarization of the conduction electrons is analyzed as a function of the amplitude of a static electric field, ranging between 0.1 and 6 kV cm^{−1}, by considering the spin dynamics of electrons in both the Γ-valley and the upper L-valleys of the semiconductor. Moreover, the role of the electron-electron scattering mechanism in the suppression of DP spin relaxation is discussed. For high values of the electric field, the strong spin–orbit coupling of electrons in the Γ-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV cm^{−1}, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained on different semiconductor structures.",
keywords = "Spin relaxation and scattering; High-field transport; Monte Carlo simulation",
author = "Bernardo Spagnolo and Stefano Spezia and Nicola Pizzolato and {Persano Adorno}, Dominique",
year = "2011",
language = "English",
type = "Other",

}

TY - GEN

T1 - RELAXATION OF ELECTRON SPIN DURING FIELD TRANSPORT IN GaAs BULKS

AU - Spagnolo, Bernardo

AU - Spezia, Stefano

AU - Pizzolato, Nicola

AU - Persano Adorno, Dominique

PY - 2011

Y1 - 2011

N2 - The spin depolarization of drifting electrons in a n-type doped GaAs bulk semiconductor is studied, in a wide range of lattice temperature (40 K < TL < 300 K) and doping density (10^{13} cm^{−3} < n < 10^{16} cm^{−3}), by adopting a semiclassical Monte Carlo approach. The effect of the mechanism of Dyakonov-Perel (DP) on the spin depolarization of the conduction electrons is analyzed as a function of the amplitude of a static electric field, ranging between 0.1 and 6 kV cm^{−1}, by considering the spin dynamics of electrons in both the Γ-valley and the upper L-valleys of the semiconductor. Moreover, the role of the electron-electron scattering mechanism in the suppression of DP spin relaxation is discussed. For high values of the electric field, the strong spin–orbit coupling of electrons in the Γ-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV cm^{−1}, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained on different semiconductor structures.

AB - The spin depolarization of drifting electrons in a n-type doped GaAs bulk semiconductor is studied, in a wide range of lattice temperature (40 K < TL < 300 K) and doping density (10^{13} cm^{−3} < n < 10^{16} cm^{−3}), by adopting a semiclassical Monte Carlo approach. The effect of the mechanism of Dyakonov-Perel (DP) on the spin depolarization of the conduction electrons is analyzed as a function of the amplitude of a static electric field, ranging between 0.1 and 6 kV cm^{−1}, by considering the spin dynamics of electrons in both the Γ-valley and the upper L-valleys of the semiconductor. Moreover, the role of the electron-electron scattering mechanism in the suppression of DP spin relaxation is discussed. For high values of the electric field, the strong spin–orbit coupling of electrons in the Γ-valleys significantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greater than 2.5 kV cm^{−1}, the spin lifetime increases with the lattice temperature. Our numerical findings are validated by a good agreement with the available experimental results and with calculations recently obtained on different semiconductor structures.

KW - Spin relaxation and scattering; High-field transport; Monte Carlo simulation

UR - http://hdl.handle.net/10447/60091

M3 - Other contribution

ER -