Thin Nb2O5 anodic films (20 nm thick) grown in phosphoric acid solution have been characterisedby EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
|Numero di pagine||9|
|Stato di pubblicazione||Published - 2007|
All Science Journal Classification (ASJC) codes
- Metals and Alloys
- Chemical Engineering(all)
- Materials Science(all)