Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques

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10 Citazioni (Scopus)

Abstract

Thin Nb2O5 anodic films (20 nm thick) grown in phosphoric acid solution have been characterisedby EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
Lingua originaleEnglish
pagine (da-a)186-194
Numero di pagine9
RivistaCorrosion Science
Volume49
Stato di pubblicazionePublished - 2007

All Science Journal Classification (ASJC) codes

  • Metals and Alloys
  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Science(all)

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