Thin Nb2O5 anodic films (20 nm thick) grown in phosphoric acid solution have been characterisedby EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
|Numero di pagine||9|
|Stato di pubblicazione||Published - 2007|
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