Radiation tolerance of NROM embedded products

Isodiana Crupi, Ernesto Della Sala, Arik Kiv, Domenico Corso, Michael Lisiansky, Felice Crupi, Yakov Roizin, Sebania Libertino, Felix Palumbo, Giuseppe Capuano, Antonio Marino, Gil Cassuto, Calogero Pace, Salvatore A. Lombardo, David Fuks

Risultato della ricerca: Article

15 Citazioni (Scopus)

Abstract

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance © 2010 IEEE.
Lingua originaleEnglish
pagine (da-a)2309-2317
Numero di pagine9
RivistaIEEE Transactions on Nuclear Science
Volume57
Stato di pubblicazionePublished - 2010

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radiation tolerance
Radiation
Data storage equipment
products
traveling ionospheric disturbances
programming
Gamma rays
Ionization
modules
Statistics
statistics
ionization
dosage
Ions
radiation
cells
ions

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cita questo

Crupi, I., Della Sala, E., Kiv, A., Corso, D., Lisiansky, M., Crupi, F., ... Fuks, D. (2010). Radiation tolerance of NROM embedded products. IEEE Transactions on Nuclear Science, 57, 2309-2317.

Radiation tolerance of NROM embedded products. / Crupi, Isodiana; Della Sala, Ernesto; Kiv, Arik; Corso, Domenico; Lisiansky, Michael; Crupi, Felice; Roizin, Yakov; Libertino, Sebania; Palumbo, Felix; Capuano, Giuseppe; Marino, Antonio; Cassuto, Gil; Pace, Calogero; Lombardo, Salvatore A.; Fuks, David.

In: IEEE Transactions on Nuclear Science, Vol. 57, 2010, pag. 2309-2317.

Risultato della ricerca: Article

Crupi, I, Della Sala, E, Kiv, A, Corso, D, Lisiansky, M, Crupi, F, Roizin, Y, Libertino, S, Palumbo, F, Capuano, G, Marino, A, Cassuto, G, Pace, C, Lombardo, SA & Fuks, D 2010, 'Radiation tolerance of NROM embedded products', IEEE Transactions on Nuclear Science, vol. 57, pagg. 2309-2317.
Crupi I, Della Sala E, Kiv A, Corso D, Lisiansky M, Crupi F e altri. Radiation tolerance of NROM embedded products. IEEE Transactions on Nuclear Science. 2010;57:2309-2317.
Crupi, Isodiana ; Della Sala, Ernesto ; Kiv, Arik ; Corso, Domenico ; Lisiansky, Michael ; Crupi, Felice ; Roizin, Yakov ; Libertino, Sebania ; Palumbo, Felix ; Capuano, Giuseppe ; Marino, Antonio ; Cassuto, Gil ; Pace, Calogero ; Lombardo, Salvatore A. ; Fuks, David. / Radiation tolerance of NROM embedded products. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57. pagg. 2309-2317.
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AU - Roizin, Yakov

AU - Libertino, Sebania

AU - Palumbo, Felix

AU - Capuano, Giuseppe

AU - Marino, Antonio

AU - Cassuto, Gil

AU - Pace, Calogero

AU - Lombardo, Salvatore A.

AU - Fuks, David

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AB - Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance © 2010 IEEE.

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