Radiation tolerance of NROM embedded products

Isodiana Crupi, Giuseppe Capuano, Antonio Marino, Gil Cassuto, Calogero Pace, Salvatore A. Lombardo, David Fuks, Ernesto Della Sala, Arik Kiv, Domenico Corso, Michael Lisiansky, Isodiana Crupi, Felice Crupi, Yakov Roizin, Sebania Libertino, Felix Palumbo

Risultato della ricerca: Article

17 Citazioni (Scopus)

Abstract

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for both moderate (< 1 Mrad) and large (> 1 Mrad) TID. The obtained data is currently employed in the design of the new generation of NROM memories, having improved radiation tolerance © 2010 IEEE.
Lingua originaleEnglish
pagine (da-a)2309-2317
Numero di pagine9
RivistaIEEE Transactions on Nuclear Science
Volume57
Stato di pubblicazionePublished - 2010

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All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cita questo

Crupi, I., Capuano, G., Marino, A., Cassuto, G., Pace, C., Lombardo, S. A., Fuks, D., Della Sala, E., Kiv, A., Corso, D., Lisiansky, M., Crupi, I., Crupi, F., Roizin, Y., Libertino, S., & Palumbo, F. (2010). Radiation tolerance of NROM embedded products. IEEE Transactions on Nuclear Science, 57, 2309-2317.