The generation of non-bridging oxygen hole center („Si–O) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different c- and b-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
|Numero di pagine||4|
|Rivista||Journal of Non-Crystalline Solids|
|Stato di pubblicazione||Published - 2007|
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