Radiation effects in nitride read-only memories

Fabio Principato; Tiziano Schillaci; Antonio Marino; null Celi; null Giarusso; null Lombardo; null Celi; null Mur; null Celi; null Corso; Michael Lisiansky; Yakov Roizin; null Libertino; null Mur; Felix Palumbo; Giuseppe Cannella

Radiation effects in nitride read-only memories

Fabio Principato, Tiziano Schillaci, Antonio Marino, Celi, Giarusso, Lombardo, Celi, Mur, Celi, Corso, Michael Lisiansky, Yakov Roizin, Libertino, Mur, Felix Palumbo, Giuseppe Cannella

Fisica e Chimica - Emilio Segrè

Risultato della ricerca: Article › peer review

2 Citazioni (Scopus)

Abstract

We report on the influence of different types of radiation on the nitride read-only memories (NROM ).The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters,such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulatedradiation dose and compared to the as-programmed (-erased) devices parameters. Their timeevolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (differenceof threshold voltage in the programmed state and the read-out voltage level) remained after c or Xirradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation,the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance

Lingua originale	English
pagine (da-a)	1857-1860
Numero di pagine	4
Rivista	MICROELECTRONICS RELIABILITY
Volume	50
Stato di pubblicazione	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Fingerprint Entra nei temi di ricerca di 'Radiation effects in nitride read-only memories'. Insieme formano una fingerprint unica.

Cita questo

@article{52a139b8fa454b67bba92a4b09e615ad,

title = "Radiation effects in nitride read-only memories",

abstract = "We report on the influence of different types of radiation on the nitride read-only memories (NROM ).The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters,such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulatedradiation dose and compared to the as-programmed (-erased) devices parameters. Their timeevolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (differenceof threshold voltage in the programmed state and the read-out voltage level) remained after c or Xirradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation,the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance",

keywords = "Radiation effects, X-ray, gamma-ray, light ions, memories, Radiation effects, X-ray, gamma-ray, light ions, memories",

author = "Fabio Principato and Tiziano Schillaci and Antonio Marino and Celi and Giarusso and Lombardo and Celi and Mur and Celi and Corso and Michael Lisiansky and Yakov Roizin and Libertino and Mur and Felix Palumbo and Giuseppe Cannella",

year = "2010",

language = "English",

volume = "50",

pages = "1857--1860",

journal = "MICROELECTRONICS RELIABILITY",

issn = "0026-2714",

}

TY - JOUR

T1 - Radiation effects in nitride read-only memories

AU - Principato, Fabio

AU - Schillaci, Tiziano

AU - Marino, Antonio

AU - Celi, null

AU - Giarusso, null

AU - Lombardo, null

AU - Celi, null

AU - Mur, null

AU - Celi, null

AU - Corso, null

AU - Lisiansky, Michael

AU - Roizin, Yakov

AU - Libertino, null

AU - Mur, null

AU - Palumbo, Felix

AU - Cannella, Giuseppe

PY - 2010

Y1 - 2010

N2 - We report on the influence of different types of radiation on the nitride read-only memories (NROM ).The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters,such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulatedradiation dose and compared to the as-programmed (-erased) devices parameters. Their timeevolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (differenceof threshold voltage in the programmed state and the read-out voltage level) remained after c or Xirradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation,the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance

AB - We report on the influence of different types of radiation on the nitride read-only memories (NROM ).The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters,such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulatedradiation dose and compared to the as-programmed (-erased) devices parameters. Their timeevolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (differenceof threshold voltage in the programmed state and the read-out voltage level) remained after c or Xirradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation,the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance

KW - Radiation effects

KW - X-ray

KW - gamma-ray

KW - light ions

KW - memories

KW - Radiation effects

KW - X-ray

KW - gamma-ray

KW - light ions

KW - memories

UR - http://hdl.handle.net/10447/50880

M3 - Article

VL - 50

SP - 1857

EP - 1860

JO - MICROELECTRONICS RELIABILITY

JF - MICROELECTRONICS RELIABILITY

SN - 0026-2714

ER -