Abstract
We report on the influence of different types of radiation on the nitride read-only memories (NROM ).The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters,such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulatedradiation dose and compared to the as-programmed (-erased) devices parameters. Their timeevolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (differenceof threshold voltage in the programmed state and the read-out voltage level) remained after c or Xirradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation,the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance
| Lingua originale | English |
|---|---|
| pagine (da-a) | 1857-1860 |
| Numero di pagine | 4 |
| Rivista | MICROELECTRONICS RELIABILITY |
| Volume | 50 |
| Stato di pubblicazione | Published - 2010 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cita questo
Principato, F., Schillaci, T., Marino, A., Celi, Giarusso, Lombardo, Celi, Mur, Celi, Corso, Lisiansky, M., Roizin, Y., Libertino, Mur, Palumbo, F., & Cannella, G. (2010). Radiation effects in nitride read-only memories. MICROELECTRONICS RELIABILITY, 50, 1857-1860.