Quantum well intermixing in GaInNAs/GaAs structures

Roberto Macaluso, Sun, Lin, Robert, Grenouillet, Gilet, Calvez, Macaluso, Million, Bryce, Nam, Dawson, Marsh, Jiang

Risultato della ricerca: Articlepeer review

19 Citazioni (Scopus)


We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
Lingua originaleEnglish
pagine (da-a)7581-7585
Numero di pagine5
RivistaJournal of Applied Physics
Stato di pubblicazionePublished - 2003

All Science Journal Classification (ASJC) codes

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