Quantum well intermixing in GaInNAs/GaAs structures

Roberto Macaluso, Sun, Lin, Robert, Grenouillet, Gilet, Calvez, Macaluso, Million, Bryce, Nam, Dawson, Marsh, Jiang

Risultato della ricerca: Article

20 Citazioni (Scopus)

Abstract

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
Lingua originaleEnglish
pagine (da-a)7581-7585
Numero di pagine5
RivistaJournal of Applied Physics
Volume94
Stato di pubblicazionePublished - 2003

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quantum wells
caps
sputtering
disorders
saturation
photoluminescence
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cita questo

Macaluso, R., Sun, Lin, Robert, Grenouillet, Gilet, ... Jiang (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94, 7581-7585.

Quantum well intermixing in GaInNAs/GaAs structures. / Macaluso, Roberto; Sun; Lin; Robert; Grenouillet; Gilet; Calvez; Macaluso; Million; Bryce; Nam; Dawson; Marsh; Jiang.

In: Journal of Applied Physics, Vol. 94, 2003, pag. 7581-7585.

Risultato della ricerca: Article

Macaluso, R, Sun, Lin, Robert, Grenouillet, Gilet, Calvez, Macaluso, Million, Bryce, Nam, Dawson, Marsh & Jiang 2003, 'Quantum well intermixing in GaInNAs/GaAs structures', Journal of Applied Physics, vol. 94, pagg. 7581-7585.
Macaluso R, Sun, Lin, Robert, Grenouillet, Gilet e altri. Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics. 2003;94:7581-7585.
Macaluso, Roberto ; Sun ; Lin ; Robert ; Grenouillet ; Gilet ; Calvez ; Macaluso ; Million ; Bryce ; Nam ; Dawson ; Marsh ; Jiang. / Quantum well intermixing in GaInNAs/GaAs structures. In: Journal of Applied Physics. 2003 ; Vol. 94. pagg. 7581-7585.
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AU - Calvez, null

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AU - Marsh, null

AU - Jiang, null

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