Abstract
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
| Lingua originale | English |
|---|---|
| pagine (da-a) | 7581-7585 |
| Numero di pagine | 5 |
| Rivista | Journal of Applied Physics |
| Volume | 94 |
| Stato di pubblicazione | Published - 2003 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Macaluso, R., Sun, Lin, Robert, Grenouillet, Gilet, Calvez, Macaluso, Million, Bryce, Nam, Dawson, Marsh, & Jiang (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94, 7581-7585.