Abstract
| Lingua originale | English |
|---|---|
| pagine (da-a) | 7581-7585 |
| Numero di pagine | 5 |
| Rivista | Journal of Applied Physics |
| Volume | 94 |
| Stato di pubblicazione | Published - 2003 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Quantum well intermixing in GaInNAs/GaAs structures. / Macaluso, Roberto; Sun; Lin; Robert; Grenouillet; Gilet; Calvez; Macaluso; Million; Bryce; Nam; Dawson; Marsh; Jiang.
In: Journal of Applied Physics, Vol. 94, 2003, pag. 7581-7585.Risultato della ricerca: Article
}
TY - JOUR
T1 - Quantum well intermixing in GaInNAs/GaAs structures
AU - Macaluso, Roberto
AU - Sun, null
AU - Lin, null
AU - Robert, null
AU - Grenouillet, null
AU - Gilet, null
AU - Calvez, null
AU - Macaluso, null
AU - Million, null
AU - Bryce, null
AU - Nam, null
AU - Dawson, null
AU - Marsh, null
AU - Jiang, null
PY - 2003
Y1 - 2003
N2 - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
AB - We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.
UR - http://hdl.handle.net/10447/45831
M3 - Article
VL - 94
SP - 7581
EP - 7585
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
ER -