Preliminary radiation hardness tests of single photon Si detectors

Fabio Principato; Angelo Piana; null Condorelli; null Carbone; Pier Giorgio Fallica; null Pagano; null Lombardo; null Fallica; null Libertino; Delfo Sanfilippo; null Falci; Massimo Mazzillo; null Valvo; Giuseppe Cannella

Preliminary radiation hardness tests of single photon Si detectors

Fabio Principato, Angelo Piana, Condorelli, Carbone, Pier Giorgio Fallica, Pagano, Lombardo, Fallica, Libertino, Delfo Sanfilippo, Falci, Massimo Mazzillo, Valvo, Giuseppe Cannella

Fisica e Chimica - Emilio Segrè

Risultato della ricerca: Other

2 Citazioni (Scopus)

Abstract

Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25°C to 65°C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3

Lingua originale	English
Numero di pagine	8
Stato di pubblicazione	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Preliminary radiation hardness tests of single photon Si detectors",

abstract = "Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25°C to 65°C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3",

keywords = "Silicon Photomultiplier, X-rays irradiation, dark count, gain, light ion irradiation, single photon avalanche diode, Silicon Photomultiplier, X-rays irradiation, dark count, gain, light ion irradiation, single photon avalanche diode",

author = "Fabio Principato and Angelo Piana and Condorelli and Carbone and Fallica, {Pier Giorgio} and Pagano and Lombardo and Fallica and Libertino and Delfo Sanfilippo and Falci and Massimo Mazzillo and Valvo and Giuseppe Cannella",

year = "2010",

language = "English",

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TY - CONF

T1 - Preliminary radiation hardness tests of single photon Si detectors

AU - Principato, Fabio

AU - Piana, Angelo

AU - Condorelli, null

AU - Carbone, null

AU - Fallica, Pier Giorgio

AU - Pagano, null

AU - Lombardo, null

AU - Fallica, null

AU - Libertino, null

AU - Sanfilippo, Delfo

AU - Falci, null

AU - Mazzillo, Massimo

AU - Valvo, null

AU - Cannella, Giuseppe

PY - 2010

Y1 - 2010

N2 - Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25°C to 65°C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3

AB - Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25°C to 65°C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3

KW - Silicon Photomultiplier

KW - X-rays irradiation

KW - dark count

KW - gain

KW - light ion irradiation

KW - single photon avalanche diode

KW - Silicon Photomultiplier

KW - X-rays irradiation

KW - dark count

KW - gain

KW - light ion irradiation

KW - single photon avalanche diode

UR - http://hdl.handle.net/10447/49008

M3 - Other

ER -