Polarization of the Radiation Emitted in GaAs SemiconductorsDriven by Far Infrared Fields

Risultato della ricerca: Articlepeer review

6 Citazioni (Scopus)

Abstract

The effects due to the mixing of two far infrared electric fields on the harmonic generation processin low doped GaAs bulks are studied by a three dimensional multivalleys Monte Carlo simulation. The conversion efficiency is calculated by using the appropriate Maxwell equation for the propagation of an electro-magnetic wave along a given direction in the medium. In particular, we focus our attention on the polarizationof the generated harmonics, by comparing the polarization obtained from the mixing of an oscillating fieldwith a static electric field with that obtained in the presence of two cyclostationary fields, having an integerratio between the two frequencies. The findings show that the strength and the polarization of the mixedfields emission exhibit a strong dependence on the angle between the orientation of the two fields. Unusualpolarization features of the generated harmonics have been found and discussed.
Lingua originaleEnglish
pagine (da-a)1061-1067
Numero di pagine7
RivistaLaser Physics
Volume20
Stato di pubblicazionePublished - 2010

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering

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