Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser

Gianpiero Buscarino, Teteris, Trukhin, Griscom, Fedotov, Buscarino

Risultato della ricerca: Article

22 Citazioni (Scopus)

Abstract

Photosensitivity of SiO2–Al and SiO2–Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2–Al and transient, lifetime about one hour, visible darkening in the case of SiO2–Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2–Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2–Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.
Lingua originaleEnglish
Numero di pagine10
RivistaJournal of Non-Crystalline Solids
Volume2009
Stato di pubblicazionePublished - 2009

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darkening
Photosensitivity
photosensitivity
Glass
Lasers
glass
Irradiation
lasers
Defects
irradiation
defects
Excimer lasers
excimer lasers
Light absorption
Paramagnetic resonance
Luminescence
electron paramagnetic resonance
optical absorption
Photons
Impurities

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser. / Buscarino, Gianpiero; Teteris; Trukhin; Griscom; Fedotov; Buscarino.

In: Journal of Non-Crystalline Solids, Vol. 2009, 2009.

Risultato della ricerca: Article

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title = "Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser",
abstract = "Photosensitivity of SiO2–Al and SiO2–Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2–Al and transient, lifetime about one hour, visible darkening in the case of SiO2–Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2–Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2–Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.",
keywords = "Radiation effects Glasses Laser–matter interactions Optical spectroscopy Defects Optical properties Absorption Lasers Luminescence Photoinduced effects Time resolved measurements Oxide glasses Alkali silicates Aluminosilicates Silica Silicates Radiation Electron spin resonance",
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T1 - Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser

AU - Buscarino, Gianpiero

AU - Teteris, null

AU - Trukhin, null

AU - Griscom, null

AU - Fedotov, null

AU - Buscarino, null

PY - 2009

Y1 - 2009

N2 - Photosensitivity of SiO2–Al and SiO2–Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2–Al and transient, lifetime about one hour, visible darkening in the case of SiO2–Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2–Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2–Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.

AB - Photosensitivity of SiO2–Al and SiO2–Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO2–Al and transient, lifetime about one hour, visible darkening in the case of SiO2–Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case of SiO2–Na and/or by recapture of self-trapped holes, which become mobile at high temperature in the case of SiO2–Al. Electrons remain trapped on the localized states formed by oxygen deficient defects.

KW - Radiation effects Glasses Laser–matter interactions Optical spectroscopy Defects Optical properties Absorption Lasers Luminescence Photoinduced effects Time resolved measurements Oxide glasses Alkali silicates Aluminosilicates Silica Silicates Radiation E

UR - http://hdl.handle.net/10447/36031

M3 - Article

VL - 2009

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

ER -