We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integrated together. © 2006 American Institute of Physics.
|Numero di pagine||3|
|Rivista||Applied Physics Letters|
|Stato di pubblicazione||Published - 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Crupi, I., Presti, C. D., Piana, A., Fallica, P. G., Priolo, F., Fallica, P. G., Irrera, A., Crupi, I., Sanfilippo, D., Iacona, F., Franzó, G., & Di Stefano, G. (2006). Photonic-crystal silicon-nanocluster light-emitting device. Applied Physics Letters, 88, 1-3.