Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys

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Abstract

Anodic films of different thickness (∼30. nm and 70. nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed and tested to model the dependence of quantum yield on photon energy and, thus, to estimate the band gap of the layers for both anodized Ta and Ta-19at% Al.
Lingua originaleEnglish
pagine (da-a)333-339
Numero di pagine7
RivistaElectrochimica Acta
Volume201
Stato di pubblicazionePublished - 2016

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Anodic oxidation
Metals
Chemical analysis
Ammonium Compounds
Optical emission spectroscopy
Borates
Glow discharges
Quantum yield
Oxides
Light absorption
Sputtering
Buffers
Energy gap
Photons
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Electrochemistry

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@article{eacd75e9639a48cfb8af2bfb6702c4dc,
title = "Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys",
abstract = "Anodic films of different thickness (∼30. nm and 70. nm) were grown by anodizing sputtering-deposited Ta-19at{\%} Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed and tested to model the dependence of quantum yield on photon energy and, thus, to estimate the band gap of the layers for both anodized Ta and Ta-19at{\%} Al.",
keywords = "Anodizing, Chemical Engineering (all), Double-layered anodic film, Electrochemistry, N incorporation, Photoelectrochemistry, Red shift",
author = "{Di Franco}, Francesco and {Di Quarto}, Francesco and Andrea Zaffora and Monica Santamaria and Hiroki Habazaki",
year = "2016",
language = "English",
volume = "201",
pages = "333--339",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Photoelectrochemical evidence of inhomogeneous composition at nm length scale of anodic films on valve metals alloys

AU - Di Franco, Francesco

AU - Di Quarto, Francesco

AU - Zaffora, Andrea

AU - Santamaria, Monica

AU - Habazaki, Hiroki

PY - 2016

Y1 - 2016

N2 - Anodic films of different thickness (∼30. nm and 70. nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed and tested to model the dependence of quantum yield on photon energy and, thus, to estimate the band gap of the layers for both anodized Ta and Ta-19at% Al.

AB - Anodic films of different thickness (∼30. nm and 70. nm) were grown by anodizing sputtering-deposited Ta-19at% Al to different formation voltages. N incorporation into the anodic films was inducing by performing the anodizing process in ammonium containing solutions. Layered anodic films were prepared by a double formation procedure with a first anodizing step in ammonium biborate solution and second anodizing step in borate buffer solution, or vice versa. Glow Discharge Optical Emission Spectroscopy was employed to show the distribution of N across the oxide. Photoelectrochemical measurements evidenced a red shift of the light absorption threshold due to N incorporation. A model was proposed and tested to model the dependence of quantum yield on photon energy and, thus, to estimate the band gap of the layers for both anodized Ta and Ta-19at% Al.

KW - Anodizing

KW - Chemical Engineering (all)

KW - Double-layered anodic film

KW - Electrochemistry

KW - N incorporation

KW - Photoelectrochemistry

KW - Red shift

UR - http://hdl.handle.net/10447/189658

UR - http://www.journals.elsevier.com/electrochimica-acta/

M3 - Article

VL - 201

SP - 333

EP - 339

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -