Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si

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Abstract

The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti-6at.%Si alloys were studied as a function of the formation voltage (5-40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO2. The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The dependence of photocurrent on electrode potential was studied in the frame of Onsager-Braun theory, which allows to evidence the influence of the initial recombination on the photocurrent yield for amorphous material.
Lingua originaleEnglish
pagine (da-a)517-525
Numero di pagine9
RivistaElectrochimica Acta
Volume110
Stato di pubblicazionePublished - 2013

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Photocurrents
Capacitance measurement
Electric potential
Sputtering
Energy gap
Permittivity
Electrodes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Electrochemistry

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title = "Photoelectrochemical characterization of amorphous anodic films on Ti-6at.{\%}Si",
abstract = "The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti-6at.{\%}Si alloys were studied as a function of the formation voltage (5-40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO2. The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The dependence of photocurrent on electrode potential was studied in the frame of Onsager-Braun theory, which allows to evidence the influence of the initial recombination on the photocurrent yield for amorphous material.",
author = "{Di Quarto}, Francesco and Monica Santamaria and {Di Franco}, Francesco and Habazaki",
year = "2013",
language = "English",
volume = "110",
pages = "517--525",
journal = "Electrochimica Acta",
issn = "0013-4686",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Photoelectrochemical characterization of amorphous anodic films on Ti-6at.%Si

AU - Di Quarto, Francesco

AU - Santamaria, Monica

AU - Di Franco, Francesco

AU - Habazaki, null

PY - 2013

Y1 - 2013

N2 - The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti-6at.%Si alloys were studied as a function of the formation voltage (5-40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO2. The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The dependence of photocurrent on electrode potential was studied in the frame of Onsager-Braun theory, which allows to evidence the influence of the initial recombination on the photocurrent yield for amorphous material.

AB - The solid state properties of anodic films grown galvanostatically on sputtering-deposited Ti-6at.%Si alloys were studied as a function of the formation voltage (5-40 V). From the photocurrent spectra a band gap of ∼3.4 eV was estimated for all the investigated thicknesses, which is almost coincident with the value measured for amorphous TiO2. The photocharacteristics allowed to estimate the flat band potential of the films, which resulted to be more anodic for thicker layers and allowed to evidence a change from n-type semiconducting material to insulator by increasing the formation voltage. A dielectric constant of ∼31 was estimated by differential capacitance measurements. The dependence of photocurrent on electrode potential was studied in the frame of Onsager-Braun theory, which allows to evidence the influence of the initial recombination on the photocurrent yield for amorphous material.

UR - http://hdl.handle.net/10447/91384

M3 - Article

VL - 110

SP - 517

EP - 525

JO - Electrochimica Acta

JF - Electrochimica Acta

SN - 0013-4686

ER -