In last decade the process of spin relaxation of conduction electrons in semiconductor structures has been widely investigated, in order to use spin polarization as information carrier . However, each initial non-equilibrium orientation decays over time during the transport. Thus, to make feasible the implementation of spin-based electronic devices, the features of spin relaxation at relatively high temperatures, jointly with the influence of transport conditions, should be fully understood . Electrical injection of spin polarization in silicon structures up to room temperature has been experimentally carried out . Despite these promising experimental results, a comprehensive theoretical framework accounting for the spin depolarization process in silicon crystals, in a wide range of temperature values, doping concentration, and amplitude of external fields, is still in a developing stage [3-4]. Here, by using a semiclassical multiparticle Monte Carlo (MC) approach, we simulate spin transport in lightly doped n-type Si samples and calculate the spin lifetimes of conduction electrons. Spin flipping is taken into account through the Elliot-Yafet mechanism, which is dominant in group IV materials.
|Numero di pagine||2|
|Stato di pubblicazione||Published - 2014|