TY - GEN
T1 - Parametrical study of multilayer structures for CIGS solar cells
AU - Parisi, Antonino
AU - Di Dio, Vincenzo
AU - Miceli, Rosario
AU - Ando', Andrea
AU - Stivala, Salvatore
AU - Palmisano, Giovanni
AU - Cino, Alfonso Carmelo
AU - Caruso, Massimo
AU - Adamo, Gabriele
AU - Tomasino, Alessandro
AU - La Cascia, Diego
AU - Cipriani, Giovanni
AU - Curcio, Luciano
AU - Ricco Galluzzo, Giuseppe
AU - Busacca, Alessandro
AU - Pernice, Riccardo
AU - Rocca, Vincenzo
PY - 2014
Y1 - 2014
N2 - In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.
AB - In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.
UR - http://hdl.handle.net/10447/105297
M3 - Conference contribution
SN - 978-1-4799-3794-3
SP - 964
EP - 968
BT - Proceedings of ICRERA 2014
ER -