Origins of radiation-induced attenuation in pure-silica-core and Ge-doped optical fibers under pulsed x-ray irradiation

Marco Cannas, Morana, Girard, Paillet, Boukenter, Ouerdane, Vidalot, Vincenzo De Michele, Marcandella, Marin

Risultato della ricerca: Articlepeer review

1 Citazioni (Scopus)

Abstract

We investigated the nature, optical properties, and decay kinetics of point defects causing large transient attenuation increase observed in silica-based optical fibers exposed to short duration and high-dose rate x-ray pulses. The transient radiation-induced attenuation (RIA) spectra of pure-silica-core (PSC), Ge-doped, F-doped, and Ge + F-doped optical fibers (OFs) were acquired after the ionizing pulse in the spectral range of [∼0.8-∼3.2] eV (∼1500-∼380 nm), from a few ms to several minutes after the pulse, at both room temperature (RT) and liquid nitrogen temperature (LNT). Comparing the fiber behavior at both temperatures better highlights the thermally unstable point defects contribution to the RIA. The transient RIA origin and decay kinetics are discussed on the basis of already-known defects absorbing in the investigated spectral range. These measurements reveal the importance of intrinsic metastable defects such as self-trapped holes (STHs), not only for PSC and F-doped fibers but also for germanosilicate optical fibers as clearly evidenced by our LNT measurements. Furthermore, our results show that fluorine co-doping seems to decrease the RIA related to the strain-assisted STHs absorption bands in both types of optical fibers. Regarding Ge-doped glasses, besides a description of the defects responsible of the RIA, highlighting the STHs' role in their transient response, we provide a clear correlation between the GeX and GeY centers' kinetics. In conclusion, the presented results improve our understanding of the transient RIA origin in the ultraviolet and visible domains. The lack of knowledge about the defects causing the RIA in the near-infrared domain will require future studies.
Lingua originaleEnglish
Numero di pagine12
RivistaJournal of Applied Physics
Volume128
Stato di pubblicazionePublished - 2020

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