Optical properties of Ge-oxygen deficient centers embedded in silica films

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Abstract

The emission features of Ge-oxygen deficient centers in a 100 nm thick Ge-doped silica films were investigated by looking at the photoluminescence spectra and time decay under synchrotron radiation excitation in the 10–300 K temperature range. These centers exhibit two luminescence bands centered at 4.3 eV and 3.2 eV associated with the de-excitation from singlet (S1) and triplet (T1) states, respectively, that are linked by an intersystem crossing process. The comparison with results obtained in a bulk Ge-doped silica sample shows that the efficiency of the intersystem crossing process depends on the properties of the matrix embedding the Ge-oxygen deficient centers, being more effective in the film than in the bulk counterpart.
Lingua originaleEnglish
pagine (da-a)670-673
Numero di pagine4
RivistaJournal of Non-Crystalline Solids
Volume353
Stato di pubblicazionePublished - 2007

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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