We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
|Numero di pagine||5|
|Stato di pubblicazione||Published - 2005|
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