Abstract
| Lingua originale | English |
|---|---|
| Stato di pubblicazione | Published - 2005 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Optical Properties and Photosensitivity of Vacuum Synthesized Ge-doped Sol-Gel Amorphous SiO2. / La Mattina, F.; Grandi, S.; Magistris, A.
2005.Risultato della ricerca: Paper
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TY - CONF
T1 - Optical Properties and Photosensitivity of Vacuum Synthesized Ge-doped Sol-Gel Amorphous SiO2
AU - La Mattina, F.; Grandi, S.; Magistris, A.
AU - Boscaino, Roberto
AU - Agnello, Simonpietro
PY - 2005
Y1 - 2005
N2 - We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
AB - We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in solgel Ge-doped amorphous SiO2. The studied materials have Gedoping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O 2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
UR - http://hdl.handle.net/10447/28151
UR - https://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1462166
M3 - Paper
ER -