We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.
|Numero di pagine||23|
|Rivista||Journal of Statistical Mechanics: Theory and Experiment|
|Stato di pubblicazione||Published - 2020|
All Science Journal Classification (ASJC) codes
- Statistical and Nonlinear Physics
- Statistics and Probability
- Statistics, Probability and Uncertainty
Valenti, D., Spagnolo, B., Carollo, A., Kharcheva, A., Krichigin, Kharcheva, Agudov, Carollo, A., Mikhaylov, Spagnolo, Dubkov, Valenti, Safonov, Belov, & Guseinov (2020). Nonstationary distributions and relaxation times in a stochastic model of memristor. Journal of Statistical Mechanics: Theory and Experiment, 2020, 024003-.