Nonstationary distributions and relaxation times in a stochastic model of memristor

Davide Valenti, Bernardo Spagnolo, Angelo Carollo, Anna Kharcheva, Krichigin, Kharcheva, Agudov, Angelo Carollo, Mikhaylov, Spagnolo, Dubkov, Valenti, Safonov, Belov, Guseinov

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1 Citazioni (Scopus)

Abstract

We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.
Lingua originaleEnglish
pagine (da-a)024003-
Numero di pagine23
RivistaJournal of Statistical Mechanics: Theory and Experiment
Volume2020
Stato di pubblicazionePublished - 2020

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Statistics and Probability
  • Statistics, Probability and Uncertainty

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    Valenti, D., Spagnolo, B., Carollo, A., Kharcheva, A., Krichigin, Kharcheva, Agudov, Carollo, A., Mikhaylov, Spagnolo, Dubkov, Valenti, Safonov, Belov, & Guseinov (2020). Nonstationary distributions and relaxation times in a stochastic model of memristor. Journal of Statistical Mechanics: Theory and Experiment, 2020, 024003-.