Nonstationary distributions and relaxation times in a stochastic model of memristor

Davide Valenti, Angelo Carollo, Anna Kharcheva, Bernardo Spagnolo, Krichigin, Kharcheva, Agudov, Angelo Carollo, Mikhaylov, Spagnolo, Dubkov, Valenti, Safonov, Belov, Guseinov

Risultato della ricerca: Articlepeer review

92 Citazioni (Scopus)


We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.
Lingua originaleEnglish
pagine (da-a)024003-
Numero di pagine23
RivistaJournal of Statistical Mechanics: Theory and Experiment
Stato di pubblicazionePublished - 2020

All Science Journal Classification (ASJC) codes

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  • ???subjectarea.asjc.2600.2613???
  • ???subjectarea.asjc.1800.1804???


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