In this work the influence of temperature and drift conditions on the electron spin relaxation in lightly doped n-type GaAs bulk semiconductors is investigated. The electron transport, including the evolution of the spin polarization vector, is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium. Electron-spin states in semiconductor structures relax by scattering with imperfections, other carriers and phonons. Spin relaxation lengths and times are computed through the D'yakonov-Perel process since this is the more relevant spin relaxation mechanism in the regime of interest (10 < T < 300 K). The decay of the initial spin polarization of the conduction electrons is calculated as a function of the distance under the presence of a static electric field varying in the range 0.1 - 3 kV/cm. We find that the electron spin relaxation distance and time have a nonmonotonic dependence on both the lattice temperature and the electric field amplitude. Understanding of these phenomena could lead to high temperature and high field engineering of the electron spin memory.
|Stato di pubblicazione||Published - 2009|