Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Mauro Mosca, Julien, Ilegems, Nicolas Grandjean, Mauro Mosca, Carlin, Tchernycheva, Nicolay, Nevou, Eric Feltin, Butté

Risultato della ricerca: Articlepeer review

7 Citazioni (Scopus)


Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved
Lingua originaleEnglish
pagine (da-a)1100-1104
Numero di pagine5
Stato di pubblicazionePublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Entra nei temi di ricerca di 'Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions'. Insieme formano una fingerprint unica.

Cita questo