By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
|Numero di pagine||6|
|Stato di pubblicazione||Published - 2002|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics