Abstract
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
Lingua originale | English |
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Pagine | 675-680 |
Numero di pagine | 6 |
Stato di pubblicazione | Published - 2002 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.3100.3107???
- ???subjectarea.asjc.2500.2500???
- ???subjectarea.asjc.3100.3104???