Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins

Isodiana Crupi, Nastasi, Vulpio, Ammendola, Giuseppe Nicotra, Gerardi, Mantarro, Lombardo, Rossetti

Risultato della ricerca: Paper

2 Citazioni (Scopus)

Abstract

We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.
Lingua originaleEnglish
Stato di pubblicazionePublished - 2002

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Nanocrystals
nanocrystals
Gases
Nanocrystalline silicon
Data storage equipment
silicon
Silicon
gases
Oxides
floating
Semiconductor quantum dots
tunnels
Tunnels
quantum dots
thresholds
oxides
cells
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Materials Science(all)

Cita questo

Crupi, I., Nastasi, Vulpio, Ammendola, Nicotra, G., Gerardi, ... Rossetti (2002). Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins.

Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins. / Crupi, Isodiana; Nastasi; Vulpio; Ammendola; Nicotra, Giuseppe; Gerardi; Mantarro; Lombardo; Rossetti.

2002.

Risultato della ricerca: Paper

Crupi, I, Nastasi, Vulpio, Ammendola, Nicotra, G, Gerardi, Mantarro, Lombardo & Rossetti 2002, 'Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins'.
Crupi I, Nastasi, Vulpio, Ammendola, Nicotra G, Gerardi e altri. Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins. 2002.
Crupi, Isodiana ; Nastasi ; Vulpio ; Ammendola ; Nicotra, Giuseppe ; Gerardi ; Mantarro ; Lombardo ; Rossetti. / Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins.
@conference{8f2a761513f548e89c2498316ab5a261,
title = "Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins",
abstract = "We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.",
author = "Isodiana Crupi and Nastasi and Vulpio and Ammendola and Giuseppe Nicotra and Gerardi and Mantarro and Lombardo and Rossetti",
year = "2002",
language = "English",

}

TY - CONF

T1 - Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins

AU - Crupi, Isodiana

AU - Nastasi, null

AU - Vulpio, null

AU - Ammendola, null

AU - Nicotra, Giuseppe

AU - Gerardi, null

AU - Mantarro, null

AU - Lombardo, null

AU - Rossetti, null

PY - 2002

Y1 - 2002

N2 - We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.

AB - We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.

UR - http://hdl.handle.net/10447/179616

UR - http://www.ttp.net

M3 - Paper

ER -