Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins

Isodiana Crupi, Mantarro, Lombardo, Rossetti, Nastasi, Vulpio, Isodiana Crupi, Ammendola, Giuseppe Nicotra, Gerardi

Risultato della ricerca: Otherpeer review

2 Citazioni (Scopus)

Abstract

We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the memory cell, even though process SiH4 and H2 shows better electrical performances.
Lingua originaleEnglish
Pagine663-668
Numero di pagine6
Stato di pubblicazionePublished - 2002

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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