Abstract
A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.
Lingua originale | English |
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pagine (da-a) | 2075-2079 |
Numero di pagine | 5 |
Rivista | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B |
Volume | 20 |
Stato di pubblicazione | Published - 2002 |
All Science Journal Classification (ASJC) codes
- ???subjectarea.asjc.3100.3104???
- ???subjectarea.asjc.2200.2208???