Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

Isodiana Crupi; null Lombardo; null Nastasi; Marco Bileci; null Vulpio; Isodiana Crupi; null Renna; null Ammendola; Giuseppe Nicotra; null Gerardi

Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

Isodiana Crupi, Lombardo, Nastasi, Marco Bileci, Vulpio, Isodiana Crupi, Renna, Ammendola, Giuseppe Nicotra, Gerardi

Ingegneria

Risultato della ricerca: Article › peer review

34 Citazioni (Scopus)

Abstract

A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.

Lingua originale	English
pagine (da-a)	2075-2079
Numero di pagine	5
Rivista	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B
Volume	20
Stato di pubblicazione	Published - 2002

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Fingerprint Entra nei temi di ricerca di 'Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals'. Insieme formano una fingerprint unica.

Cita questo

@article{32042f6f1cc5427dafadf92ee7fdf4a1,

title = "Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals",

abstract = "A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.",

author = "Isodiana Crupi and Lombardo and Nastasi and Marco Bileci and Vulpio and Isodiana Crupi and Renna and Ammendola and Giuseppe Nicotra and Gerardi",

year = "2002",

language = "English",

volume = "20",

pages = "2075--2079",

journal = "JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B",

issn = "1071-1023",

}

TY - JOUR

T1 - Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals

AU - Crupi, Isodiana

AU - Lombardo, null

AU - Nastasi, null

AU - Bileci, Marco

AU - Vulpio, null

AU - Crupi, Isodiana

AU - Renna, null

AU - Ammendola, null

AU - Nicotra, Giuseppe

AU - Gerardi, null

PY - 2002

Y1 - 2002

N2 - A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.

AB - A study was conducted on metal-oxide-semiconductor (MOS) capacitor and transistor (MOSFET) structures containing a plurality of self-assembled silicon quantum dots incorporated in SiO2. The array of Si islands with an average diameter of a few nanometers was realized, by depositing a subnanometer silicon layer on top of very thin SiO2 film with chemical vapor deposition (CVD). As such, the memory effect were demonstrated by the flat-band shift in the capacitors, or the threshold voltage shift in the transistors, after write and erase operations achieved by electron tunneling through the tunnel oxide.

UR - http://hdl.handle.net/10447/179622

M3 - Article

VL - 20

SP - 2075

EP - 2079

JO - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B

JF - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B

SN - 1071-1023

ER -