Multi-bit storage through Si nanocrystals embedded in SiO2

Isodiana Crupi; null De Salvo; null Lombardo; null Perniola; null Corso; null Melanotte; Isodiana Crupi; null Ammendola; null Gerardi

Multi-bit storage through Si nanocrystals embedded in SiO2

Isodiana Crupi, De Salvo, Lombardo, Perniola, Corso, Melanotte, Isodiana Crupi, Ammendola, Gerardi

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Risultato della ricerca: Article › peer review

13 Citazioni (Scopus)

Abstract

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

Lingua originale	English
pagine (da-a)	411-414
Numero di pagine	4
Rivista	Microelectronic Engineering
Volume	72
Stato di pubblicazione	Published - 2004

All Science Journal Classification (ASJC) codes

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???subjectarea.asjc.3100.3107???
???subjectarea.asjc.3100.3104???
???subjectarea.asjc.2500.2508???
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@article{155343baefb3477985b591b70abe50d0,

title = "Multi-bit storage through Si nanocrystals embedded in SiO2",

abstract = "We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

author = "Isodiana Crupi and {De Salvo} and Lombardo and Perniola and Corso and Melanotte and Isodiana Crupi and Ammendola and Gerardi",

year = "2004",

language = "English",

volume = "72",

pages = "411--414",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Multi-bit storage through Si nanocrystals embedded in SiO2

AU - Crupi, Isodiana

AU - De Salvo, null

AU - Lombardo, null

AU - Perniola, null

AU - Corso, null

AU - Melanotte, null

AU - Crupi, Isodiana

AU - Ammendola, null

AU - Gerardi, null

PY - 2004

Y1 - 2004

N2 - We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

AB - We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

UR - http://hdl.handle.net/10447/179562

M3 - Article

VL - 72

SP - 411

EP - 414

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Multi-bit storage through Si nanocrystals embedded in SiO2

Abstract

All Science Journal Classification (ASJC) codes

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