We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.
|Numero di pagine||4|
|Stato di pubblicazione||Published - 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Crupi, I., De Salvo, Lombardo, Perniola, Corso, Melanotte, Crupi, I., Ammendola, & Gerardi (2004). Multi-bit storage through Si nanocrystals embedded in SiO2. Microelectronic Engineering, 72, 411-414.