Abstract
We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.
Lingua originale | English |
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pagine (da-a) | 411-414 |
Numero di pagine | 4 |
Rivista | Microelectronic Engineering |
Volume | 72 |
Stato di pubblicazione | Published - 2004 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering