Multi-bit storage through Si nanocrystals embedded in SiO2

Isodiana Crupi, Corso, Melanotte, Ammendola, Gerardi, De Salvo, Lombardo, Perniola

Risultato della ricerca: Article

13 Citazioni (Scopus)

Abstract

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)411-414
Numero di pagine4
RivistaMicroelectronic Engineering
Volume72
Stato di pubblicazionePublished - 2004

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Nanocrystals
Chemical vapor deposition
nanocrystals
vapor deposition
cells
Oxides
Data storage equipment
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cita questo

Crupi, I., Corso, Melanotte, Ammendola, Gerardi, De Salvo, ... Perniola (2004). Multi-bit storage through Si nanocrystals embedded in SiO2. Microelectronic Engineering, 72, 411-414.

Multi-bit storage through Si nanocrystals embedded in SiO2. / Crupi, Isodiana; Corso; Melanotte; Ammendola; Gerardi; De Salvo; Lombardo; Perniola.

In: Microelectronic Engineering, Vol. 72, 2004, pag. 411-414.

Risultato della ricerca: Article

Crupi, I, Corso, Melanotte, Ammendola, Gerardi, De Salvo, Lombardo & Perniola 2004, 'Multi-bit storage through Si nanocrystals embedded in SiO2', Microelectronic Engineering, vol. 72, pagg. 411-414.
Crupi I, Corso, Melanotte, Ammendola, Gerardi, De Salvo e altri. Multi-bit storage through Si nanocrystals embedded in SiO2. Microelectronic Engineering. 2004;72:411-414.
Crupi, Isodiana ; Corso ; Melanotte ; Ammendola ; Gerardi ; De Salvo ; Lombardo ; Perniola. / Multi-bit storage through Si nanocrystals embedded in SiO2. In: Microelectronic Engineering. 2004 ; Vol. 72. pagg. 411-414.
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AU - Crupi, Isodiana

AU - Corso, null

AU - Melanotte, null

AU - Ammendola, null

AU - Gerardi, null

AU - De Salvo, null

AU - Lombardo, null

AU - Perniola, null

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AB - We have realized Si nanocrystal memory cells in which the Si dots have been deposited by CVD on SiO2 and then covered by a CVD control oxide. In this paper, we report a study on the potential of these cells for dual bit storage. © 2004 Elsevier B.V. All rights reserved.

UR - http://hdl.handle.net/10447/179562

M3 - Article

VL - 72

SP - 411

EP - 414

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

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