The effects of an external correlated source of noise on the intrinsic carrier noise ina low-doped GaAs bulk, operating under periodic conditions, are investigated. Numerical residtsconfirm that the dynamical response of electrons driven by a high-frequency periodic electric fieldreceives a benefit by the constructive interplay between the fluctuating field and the intrinsic noiseof the system. In particidar, in this contribute we show a nonmonotonic behavior of the integratedspectral density, which value critically depends on the correlation time of the external noise source.
|Numero di pagine||4|
|Stato di pubblicazione||Published - 2009|
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