Monte Carlo Simulation of Spin Relaxation of Conduction Electrons in Silicon

Risultato della ricerca: Articlepeer review

3 Citazioni (Scopus)

Abstract

Recently, electrical injection of spin polarization in n-type and p-type silicon up to room-temperature has been experimental-ly carried out. Despite of these promising experimental results, a comprehensive theoretical framework concerning the influenceof transport conditions on the spin depolarization process in silicon structures, in a wide range of values of temperature, dopingconcentration and amplitude of external fields, is still in a developing stage. In this contribution we use a semiclassical multiparti-cle Monte Carlo approach to simulate the electron transport and spin dynamics in lightly doped n-type Si crystals and numericallycalculate the spin lifetimes of drifting electrons. Spin flipping is taken into account through the Elliot-Yafet mechanism, which isdominant in group IV materials. We discuss the influence of different intravalley and intervalley phonon interactions in the spinrelaxation process during the spin transport. Our findings are in good agreement with those obtained by using different theoreticalapproaches. Moreover, our Monte Carlo predictions, in ranges of temperature and field amplitude yet unexplored, can guide futureexperimental studies towards a more effective design of room-temperature silicon based spintronic-devices.
Lingua originaleEnglish
pagine (da-a)25-28
Numero di pagine4
RivistaLithuanian Journal of Physics
Volume54
Stato di pubblicazionePublished - 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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