TY - JOUR
T1 - Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures
AU - Persano Adorno, Dominique
AU - Zarcone, Michelangelo
AU - Starikov, null
AU - Varani, null
AU - Gružinskis, null
AU - Vaissière, null
AU - Shiktorov, null
AU - Gružinskis, null
AU - Reggiani, null
AU - González, null
AU - Pérez, null
AU - Ferrante, Gaetano
PY - 2004
Y1 - 2004
N2 - To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
AB - To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
UR - http://hdl.handle.net/10447/29971
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200304070
M3 - Article
SN - 1610-1634
VL - 1
SP - 1367
EP - 1376
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
ER -