Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon

Mauro Mosca, Benjamin Damilano, Richard Dudek, Nadia Briere De L'Isle, Lydie Dua, Jean-Luc Reverchon, Jean-Yves Duboz, Daniel Poitras, Richard Dudek, Fabrice Semond, Nicolas Grandjean, Mauro Mosca, Tom Cassidy, Jean Massies, Pierre Legagneux

Risultato della ricerca: Articlepeer review

3 Citazioni (Scopus)

Abstract

Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/SiO2) mirror deposition. The electroluminescence spectra show that the emission within the distributed Bragg reflector stop band is enhanced in the membrane microcavity. The cavity modes are broadened by some cavity length non-uniformity that is introduced when the GaN is back etched to adjust the cavity length. This process does not need any transfer on an intermediate host substrate and is fully compatible with large area semiconductor processing.
Lingua originaleEnglish
pagine (da-a)118-121
Numero di pagine4
RivistaJAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES
Volume42
Stato di pubblicazionePublished - 2003

All Science Journal Classification (ASJC) codes

  • ???subjectarea.asjc.2200.2200???
  • ???subjectarea.asjc.3100.3100???

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