Memory effects in MOS capacitors with silicon quantum dots

Isodiana Crupi, Salvatore Lombardo, Yougui Liao, Michele Vulpio, Massimo Melanotte, Isodiana Crupi, Corrado Bongiorno, Barbara Fazio, Corrado Spinella, Cosimo Gerardi

Risultato della ricerca: Article

2 Citazioni (Scopus)

Abstract

To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics. A model which explains both the occurence of steady-state conduction through the SiO2/SRO/SiO2 stack at a relatively low voltage and the shift of flat-band voltage is presented and discussed. © 2001 Elsevier Science B.V. All rights reserved.
Lingua originaleEnglish
pagine (da-a)283-285
Numero di pagine3
RivistaMATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS
Volume15
Stato di pubblicazionePublished - 2001

Fingerprint

MOS capacitors
Silicon
silicon oxides
Semiconductor quantum dots
capacitors
quantum dots
Data storage equipment
Oxides
Oxide films
Electric potential
silicon
Crystalline materials
oxide films
Supersaturation
Plasma enhanced chemical vapor deposition
Amorphous silicon
Polysilicon
Hysteresis
capacitance-voltage characteristics
Capacitance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cita questo

Crupi, I., Lombardo, S., Liao, Y., Vulpio, M., Melanotte, M., Crupi, I., ... Gerardi, C. (2001). Memory effects in MOS capacitors with silicon quantum dots. MATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS, 15, 283-285.

Memory effects in MOS capacitors with silicon quantum dots. / Crupi, Isodiana; Lombardo, Salvatore; Liao, Yougui; Vulpio, Michele; Melanotte, Massimo; Crupi, Isodiana; Bongiorno, Corrado; Fazio, Barbara; Spinella, Corrado; Gerardi, Cosimo.

In: MATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS, Vol. 15, 2001, pag. 283-285.

Risultato della ricerca: Article

Crupi, I, Lombardo, S, Liao, Y, Vulpio, M, Melanotte, M, Crupi, I, Bongiorno, C, Fazio, B, Spinella, C & Gerardi, C 2001, 'Memory effects in MOS capacitors with silicon quantum dots', MATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS, vol. 15, pagg. 283-285.
Crupi, Isodiana ; Lombardo, Salvatore ; Liao, Yougui ; Vulpio, Michele ; Melanotte, Massimo ; Crupi, Isodiana ; Bongiorno, Corrado ; Fazio, Barbara ; Spinella, Corrado ; Gerardi, Cosimo. / Memory effects in MOS capacitors with silicon quantum dots. In: MATERIALS SCIENCE AND ENGINEERING. C, BIOMIMETIC MATERIALS, SENSORS AND SYSTEMS. 2001 ; Vol. 15. pagg. 283-285.
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abstract = "To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics. A model which explains both the occurence of steady-state conduction through the SiO2/SRO/SiO2 stack at a relatively low voltage and the shift of flat-band voltage is presented and discussed. {\circledC} 2001 Elsevier Science B.V. All rights reserved.",
author = "Isodiana Crupi and Salvatore Lombardo and Yougui Liao and Michele Vulpio and Massimo Melanotte and Isodiana Crupi and Corrado Bongiorno and Barbara Fazio and Corrado Spinella and Cosimo Gerardi",
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T1 - Memory effects in MOS capacitors with silicon quantum dots

AU - Crupi, Isodiana

AU - Lombardo, Salvatore

AU - Liao, Yougui

AU - Vulpio, Michele

AU - Melanotte, Massimo

AU - Crupi, Isodiana

AU - Bongiorno, Corrado

AU - Fazio, Barbara

AU - Spinella, Corrado

AU - Gerardi, Cosimo

PY - 2001

Y1 - 2001

N2 - To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics. A model which explains both the occurence of steady-state conduction through the SiO2/SRO/SiO2 stack at a relatively low voltage and the shift of flat-band voltage is presented and discussed. © 2001 Elsevier Science B.V. All rights reserved.

AB - To form crystalline Si dots embedded in SiO2, we have deposited thin films of silicon-rich oxide (SRO) by plasma-enhanced chemical vapor deposition of SiH4 and O2. Then the materials have been annealed in N2 ambient at temperatures between 950°C and 1100°C. Under such processing, the supersaturation of Si in the amorphous SRO film produces the formation of crystalline Si dots embedded in SiO2. The narrow dot size distributions, analyzed by transmission electron microscopy, are characterized by average grain radii and standard deviations down to about 1 nm. The memory functions of such structures has been investigated in MOS capacitors with a SRO film sandwiched between two thin SiO2 layers as insulator and with an n+ polycrystalline silicon gate. The operations of write and storage are clearly detected by measurements of hysteresis in capacitance-voltage characteristics. A model which explains both the occurence of steady-state conduction through the SiO2/SRO/SiO2 stack at a relatively low voltage and the shift of flat-band voltage is presented and discussed. © 2001 Elsevier Science B.V. All rights reserved.

UR - http://hdl.handle.net/10447/179590

M3 - Article

VL - 15

SP - 283

EP - 285

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

SN - 0928-4931

ER -