Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

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28 Citazioni (Scopus)


We report on the electrical and optical characterization,in continuous wave regime, of a novel class of siliconphotomultipliers fabricated in standard planar technology on asilicon p-type substrate. Responsivity measurements, performedwith an incident optical power down to tenths of picowatts, atdifferent reverse bias voltages and on a broad (340–820 nm)spectrum, will be shown and discussed. The device temperaturewas monitored, allowing us to give a physical interpretation of themeasurements. The obtained results demonstrate that such novelsilicon photomultipliers are suitable as sensitive power metersfor low photon fluxes.
Lingua originaleEnglish
pagine (da-a)3718-3725
Numero di pagine8
RivistaIEEE Transactions on Electron Devices
Stato di pubblicazionePublished - 2013

All Science Journal Classification (ASJC) codes

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