We report on the electrical and optical characterization,in continuous wave regime, of a novel class of siliconphotomultipliers fabricated in standard planar technology on asilicon p-type substrate. Responsivity measurements, performedwith an incident optical power down to tenths of picowatts, atdifferent reverse bias voltages and on a broad (340–820 nm)spectrum, will be shown and discussed. The device temperaturewas monitored, allowing us to give a physical interpretation of themeasurements. The obtained results demonstrate that such novelsilicon photomultipliers are suitable as sensitive power metersfor low photon fluxes.
|Numero di pagine||8|
|Rivista||IEEE Transactions on Electron Devices|
|Stato di pubblicazione||Published - 2013|
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