TY - JOUR
T1 - Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
AU - Busacca, Alessandro
AU - Stivala, Salvatore
AU - Agro', Diego
AU - Giaconia, Giuseppe Costantino
AU - Parisi, Antonino
AU - Adamo, Gabriele
AU - Fallica, Giorgio
AU - Sanfilippo, Delfo
AU - Mazzillo, Massimo
PY - 2013
Y1 - 2013
N2 - We report on the electrical and optical characterization,in continuous wave regime, of a novel class of siliconphotomultipliers fabricated in standard planar technology on asilicon p-type substrate. Responsivity measurements, performedwith an incident optical power down to tenths of picowatts, atdifferent reverse bias voltages and on a broad (340–820 nm)spectrum, will be shown and discussed. The device temperaturewas monitored, allowing us to give a physical interpretation of themeasurements. The obtained results demonstrate that such novelsilicon photomultipliers are suitable as sensitive power metersfor low photon fluxes.
AB - We report on the electrical and optical characterization,in continuous wave regime, of a novel class of siliconphotomultipliers fabricated in standard planar technology on asilicon p-type substrate. Responsivity measurements, performedwith an incident optical power down to tenths of picowatts, atdifferent reverse bias voltages and on a broad (340–820 nm)spectrum, will be shown and discussed. The device temperaturewas monitored, allowing us to give a physical interpretation of themeasurements. The obtained results demonstrate that such novelsilicon photomultipliers are suitable as sensitive power metersfor low photon fluxes.
UR - http://hdl.handle.net/10447/84235
UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6616585&queryText%3Dadamo+sipm
M3 - Article
SN - 0018-9383
VL - 60
SP - 3718
EP - 3725
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
ER -